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DUCROQUET Frederique



Site de Grenoble - Bâtiment BCAi A354

  • Tél. :
  • Fax : 0456529501

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Fields of Research:

- Electrical characterization of semiconductor based materials and devices.
- Defect spectroscopy (DLTS, admittance): InP based optoelectronics devices, thin film solar cells...
- Interface state spectroscopy: high-k dielectrics, MOS capacitors...
- Transport properties in semiconductor devices : high mobility MOSFETs, disordered materials...


Activités / CV

Frédérique Ducroquet received the engineer degree in electronics (ISEN) in Lille, France, in 1986, and the Ph.D. and hab. degrees from the National Institute for Applied Sciences (INSA) in Lyon in 1989 and 1994 respectively. She joined the Materials Physics Laboratory (LPM) at INSA in 1986. Her research activities concerned the electrical characterization and defect spectroscopy on III–V semiconductor based materials and devices. In 1991, she worked as a Post-doctoral Fellow at the University of Michigan, Ann Arbor, involved in the area of InP and related compounds grown by metalorganic chemical vapor deposition. In 1994, she joined the French National Centre for Scientific Research (CNRS) and was engaged in the development of GaAs field emitter arrays in the North Institute for Electronics and Microelectronics (IEMN), Lille. From 1999 to 2006, she worked on ultimate CMOS technology and metal gate architecture, in the framework of the CEA-LETI/LPM collaboration and the PLATO Organization, Grenoble, France. Since 2005, she works with IMEP-LaHC, Grenoble, on the electrical characterization and modeling of high permittivity dielectrics and thin film solar cells. A list of publications can be found here.

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mise à jour le 6 octobre 2022

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