GHIBAUDO Gerard

Activités / CV

Gérard Ghibaudo, Fellow IEEE 2013-2022, was born in France in 1954. He graduated from Grenoble Institute of Technology in 1979 and obtained the PhD degree in Electronics in 1981, the State Thesis degree in Physics in 1984 and the PhD supervision habilitation diploma in 1986 from Grenoble University. He was CNRS PhD student from 1979 to 1981 and became associate researcher at CNRS in 1981 in LPCS laboratory (Grenoble). He was finally promoted Director of Research at CNRS in 1992 (exceptional class in 2014). He was Director of IMEP-LAHC Laboratory located at MINATEC-INPG center from 2007 to 2013. During the academic year 1987-1988, he spent a sabbatical year at Naval Research Laboratory in Washington, DC (USA) where he worked on the characterization of MOSFETs. His main research activities were in the field of electronics transport, oxidation of silicon, MOS device physics, fluctuations and low frequency noise and dielectric reliability. He participated to over 20 European projects and was responsible for over 50 research contracts. Dr. G. Ghibaudo has supervised over 125 PhD students in his career. He was co-founder of the First European Workshop on Low Temperature Electronics (WOLTE 94) and organizer of 20 Workshops/Summer School during the last 40 years. Dr. G. Ghibaudo was member of the Editorial board of Solid State Electronics and served as associate editor of Microelectronics reliability journal and Journal of Active and Passive Electronic Component. During his career he authored over 596 articles in International Refereed Journals and 762 communications in International Conferences. He participated to 86 invited papers in International Conferences and he wrote 34 book chapters.
Dr. G. Ghibaudo featured over 952 items and 13.945 citations in Web of Science where he had an H index of 48.G. Ghibaudo is ranking 14% world top researcher among Elsevier Standford  100,000 top-scientists.