PhD Defense of PARK Hyungjin

Abstract:
The main purpose of this PhD work is to investigate the fundamentals of floating body effects (FBEs) in recent generations of ultrathin FDSOI devices. Several FBEs, (i) kink effect, (ii) gate-induced FBE, (iii) parasitic bipolar transistor, (iv) sharp switching, (v) current hysteresis, and (vi) transient and history effect (MSD), are scrutinized in terms of interaction between holes and electrons in ultrathin transistor body. The key point is that in an n-channel SOI MOSFET the FBEs are originated from the interplay of the excess holes which are either being stored or eliminated. For better understanding of FBEs, the body potential Vb has measured directly in H-gate body contact n-MOSFETs. The dynamic Vb variation has also been monitored successfully thanks to lateral P+ body contacts extended into the undoped-silicon film underneath the front-gate.

Jury members:

• CARLOS SAMPEDRO - Reviewer
• BOGDAN CRETU - Reviewer
• OLIVIER BONNAUD - Examiner
• GERARD GHIBAUDO - Examiner