Coupling effects in Monolithic 3D technologies

3D sequential integration, also named monolithic 3D integration, consists in stacking active device layers on top of each other in a sequential manner. The sequential flow offers unique 3D connectivity opportunities in the More Moore direction and is also a pathway to the More than Moore direction, enabling the possiblity of new functionalities such as the 3D imagers. However, the ultra-thin Inter-Layer Dielectric (ILD) separating the sequential tiers can act as a Back Gate (BG) oxide for the top transistors, becoming a pathway of electrical interference between stacked devices. This seminar will provide an in depth view of the coupling effects as well as the solutions and techniques that can mitigate these effects.