Adel M'FOUKH

Abstract :
The strategy of the microelectronics industry to gain computing power has been to reduce the size of transistors. Today, the nanoscale has been reached and with it the physical limits for these components. It is therefore necessary to change the approach while taking into account the quantum phenomena that emerge at this scale for the next generations of transistors. A rigorous theoretical approach supports this task by simulating the effects of the different technological options. Within this seminar, I will present a theoretical model of electronic transport in these nanoscale devices. We have developed a microscopic approach to describe the semiconductor heterostructures and the interaction due to atomic vibrations which are key points for the performance of future devices. This has allowed us to study promising devices for the next generation of energy-efficient and high-performance transistors (tunnel devices and 2D materials-based MOSFET).