Advanced DC and RF electrical characterization of passive and active components in 28nm-FDSOI technology at cryogenic temperature

Abstract :
The aim of this seminar is to present my thesis work on DC and RF electrical characterization from room temperature down to very low temperatures (4K). This work began with a study of RF measurement setups at cryogenic temperatures, with their constraints and solutions. The measurement setup presented enabled us to characterize inductors and perform a study on different substrates. We also characterized transistors in 28 FD-SOI technology, demonstrating the benefits of this technology for very low temperatures. Finally, all these measurements enabled us to explain the operation and analyze the measurement results of a low-noise amplifier at cryogenic temperature.