The EZ-FET for the characterization of SOI substrates

Abstract :
The purpose of this seminar is to present the thesis work on the development and optimization of the EZ-FET, an intermediate device between pseudo-MOSFET and FDSOI transistor, for the characterization of SOI substrates manufactured at low temperature. Unlike the pseudo-MOSFET, which provides access to the electrical parameters of the film-BOX interface, the EZ-FET allows a simple integration of the gate stack and thus the characterization of the electrical parameters of the future channel in the front side of the transistors. The thesis work began with the optimization of characterization tools, including measurement benches and extraction methodologies, to ensure reliable and relatively rapid characterization. Subsequently, two options were explored to adapt the EZ-FET to low-temperature processes: the undoped EZ-FET, and the dopants activation by laser. Finally, using the optimized EZ-FET, detailed characterization and comparison were performed on SOI substrates transferred at low temperature.