PhD Defense of CATAPANO Edoardo

The purpose of this dissertation was double: (i) characterize MOS based qubit devices from room temperature down to deep cryogenic temperature to support the realization of a qubit industrial process flow, and (ii) develop simulation tools and compact models able to provide insights about the technology and the device physics.
Two possible critical aspects can be identified in qubit FD – SOI devices: doping or defect diffusion that degrades the transport in the entire temperature range investigated, and that will jeopardize the correct functioning of the device in quantum dot regime; traps underneath the thick nitride spacers, that limits the transport as well, as clearly visible from I_D (V_G) cures at cryogenic temperature, and that are likely responsible of a larger device noise.