Simulation of resistive switching in transistors at the atomic scale "atomristors"

Abstract :
Nanoscale resistive switching devices, named “atomristors”, are very promising for potential future nanoelectronics, including non-volatile memories, high frequency
switches and neuromorphic computing. The switching mechanism in atomristors plausibly lies in migration of metallic ions from the contacts to inside the 2D material
induced by external electric field. The resulting conductive filament connects the electrodes, thus enabling switching between different resistance states. The physics behind the filament evolution and the device performances remains a complex issue that require further investigation. In our study, we are investigating the electronic and transport properties in a resistive switching device, which is based on monolayer and multilayer 2D materials sandwiched between two metallic electrodes. In this seminar,
I will present our ongoing study and our recent results regarding the effects that can alter the transport properties including the thickness and conducting type of the 2D material, the structural and electronic behavior at the interface metal/2D material, and defects.
The aim of our study is to understand the mechanism of resistance switching between two states in atomristors.