THz Optoelectric Unit

Impulse and time-domain characterization of photodetectors with ultra-short response times (1 ps – >1 ns)
→ Application to the generation and detection of pulsed THz signals.

Equipment:

• Femtosecond lasers @ 780 nm and 1550 nm
• High-speed oscilloscope (1.5 GHz bandwidth)
• Optoelectronic equivalent-time characterization bench (1 ps resolution)

On-chip characterization of small material volumes (< 1 mm³) in the 50–500 GHz band.

Equipment:

• Femtosecond laser
• Integrated THz component (GaAs-based device or TeraLineX component, Protemics GmbH) and dedicated measurement bench

It is possible to obtain information on the nonlinear properties of a material by analyzing the THz signal it emits when pumped by an optical fs pulse. For this type of characterization, the platform is equipped with:

• An MKS Synergy laser (800 nm, 12 fs, 75 MHz, 1 W)
• A Coherent LIBRA amplified laser chain (800 nm, 50 fs, 1 kHz, 5 W)
• A Light Conversion TOPAS Prime OPA (output wavelength range from 2.6 µm to 285 nm, i.e., from 0.48 eV to 4.35 eV)
• A Daheng New Epoch Technology ABCD DH-ZAP-APD detector
• Various nonlinear crystals (ZnTe, GaP, GaSe, …)
• Photoconductive antennas