PhD Defense of Jonathan LEHMANN
" Electrical characterization of AlGaN/GaN hetero-structures for Power device "
Tuesday, October 20, 2015 at 10h30
Abstract :
This PhD is part of the development of HEMT power transistor based on gallium nitride at the CEA. Due to their high electron mobility, high breakdown field and good thermal conductivity, AlGaN/GaN HEMT are very promising devices for power electronic applications. The goal of this PhD is, using electrical characterization, to increase the knowledge of the AlGaN/GaN material prior to the fabrication of transistors.
First, through measurements of the resistance of the electron gas located at the AlGaN/GaN interface, a trapping phenomenon was evidenced in the material. Then, in order to set a production follow-through of AlGaN/GaN on Si wafers , a method of measuring the sheet resistance of a AlGaN/GaN stack without the fabrication of contacts was developed and patented. Finally, on HEMT transistors fabricated using different epitaxies, a detailed study of the sheet resistance, the mobility and the sheet carrier density in and out of the gated area was carried out.
Keywords:
HEMT, AlGaN/GaN, electrical characterization
Members of the jury :
Edwige BANO - Professor IMEP-LAHC : Supervisor
Gérard GHIBAUDO - Research supervisor IMEP-LAHC : Co-supervisor
Charles LEROUX - Engineer , CEA-LETI : Co-supervisor
Dominique PLANSON - Professor INSA Lyon : Chairman
Jean-Guy TARTARIN - Professor LAAS-CNRS : Rapporteur
Nathalie LABAT - Professor IMS : Rapporteur
Abstract :
This PhD is part of the development of HEMT power transistor based on gallium nitride at the CEA. Due to their high electron mobility, high breakdown field and good thermal conductivity, AlGaN/GaN HEMT are very promising devices for power electronic applications. The goal of this PhD is, using electrical characterization, to increase the knowledge of the AlGaN/GaN material prior to the fabrication of transistors.
First, through measurements of the resistance of the electron gas located at the AlGaN/GaN interface, a trapping phenomenon was evidenced in the material. Then, in order to set a production follow-through of AlGaN/GaN on Si wafers , a method of measuring the sheet resistance of a AlGaN/GaN stack without the fabrication of contacts was developed and patented. Finally, on HEMT transistors fabricated using different epitaxies, a detailed study of the sheet resistance, the mobility and the sheet carrier density in and out of the gated area was carried out.
Keywords:
HEMT, AlGaN/GaN, electrical characterization
Members of the jury :
Edwige BANO - Professor IMEP-LAHC : Supervisor
Gérard GHIBAUDO - Research supervisor IMEP-LAHC : Co-supervisor
Charles LEROUX - Engineer , CEA-LETI : Co-supervisor
Dominique PLANSON - Professor INSA Lyon : Chairman
Jean-Guy TARTARIN - Professor LAAS-CNRS : Rapporteur
Nathalie LABAT - Professor IMS : Rapporteur
Partenaires
Thesis prepared in the laboratory: UMR 5130 IMEP-LaHC (Institut de
Microélectronique, Electromagnétisme, Photonique – Laboratoire Hyperfréquences et Caractérisation ), supervised by Edwige BANO , supervisor and Gérard GHIBAUDO, Co-supervisor
Microélectronique, Electromagnétisme, Photonique – Laboratoire Hyperfréquences et Caractérisation ), supervised by Edwige BANO , supervisor and Gérard GHIBAUDO, Co-supervisor
Date infos
Thesis defense of Jonathan LEHMANN for a DOCTORAL thesis at the University of Grenoble, Nano Electronics and Nanotechnologies speciality, entitled:Location infos
Maison Minatec (sitting room )3 Parvis Louis Néel - CS 50257
38016 Grenoble Cedex 01
Contact
Mme Edwige BANO
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