PhD Defense of BOSSUET Alice

The evolution of silicon technologies now makes possible the development of many applications in the millimeter and submillimeter areas such as imaging systems for health and safety, and high speed communication systems. The evolution of these silicon technologies is characterized by the increase of the transistor performances with the frequency that requires the development of efficient radiofrequency measurement tools for accurate modeling of active components or the optimization of integrated circuits.
In this framework, the load-pull characterization is an essential method to model the behavior of transistors in nonlinear region. In the G Band [140-220 GHz], the classical measurement environment typically available has not the required performance for this kind of characterization due to the losses in the accesses to the device under test. The aim of this thesis is to lift this lock by offering, in the STMicroelectronics BiCMOS 55 nm technology, a fully integrated load-pull characterization bench on silicon in order to be as close as possible to the device to characterize. The thesis manuscript is divided into four chapters.