PhD Defense of Fanyu LIU

This thesis is dedicated to the electrical characterization and transport modeling in advanced SOI materials and devices for ultimate micro-nano-electronics.
SOI technology is an efficient solution to the technical challenges facing further downscaling and integration. Our goal was to develop appropriate characterization methods and determine the key parameters. Firstly, the conventional pseudo-MOSFET characterization was extended to heavily-doped SOI wafers and an adapted model for parameters extraction was proposed. We developed a nondestructive electrical method to estimate the quality of bonding interface in metal-bonded wafers for 3D integration. In ultra-thin fully-depleted SOI MOSFETs, we evidenced the parasitic bipolar effect induced by band-to-band tunneling, and proposed new methods to extract the bipolar gain. We investigated multiple-gate transistors by focusing on the coupling effect in inversion-mode vertical double-gate SOI FinFETs. An analytical model was proposed and subsequently adapted to the full depletion region of junctionless SOI FinFETs. We also proposed a compact model of carrier profile and adequate parameter extraction techniques for junctionless nanowires.

Members of  jury :
• Sorin CRISTOLOVEANU: Supervisor
• Irina IONICA : Co-supervisor
• Cristell MANEUX: Reporter
• Yong Tae KIM: Reporter
• Maud VINET: Examiner
• Francisco GAMIZ: Examiner