PhD of Mr Anthony VILLALON

Band to band tunneling field effect transistor (TFET) is a PIN-gated architecture able to reach sub 60mV/dec subthreshold slopes at room temperature, which is an advantage over MOSFET in low power applications. The objective of this thesis is to study and characterize experimental TFETs fabricated using MOSFET-compatible FDSOI technology. The first generation of devices is realized on planar technology, and studies the impact of source/channel heterojunction, channel thickness and annealing temperature on device performances, while the second generation possesses horizontal nanowire architecture, with research focusing on the impact of the wire geometry. Through measurements we were able to prove the band to band tunneling injection, while the reported performances were compared with literature and with MOSFET. Furthermore, advanced characterizations led to a better understanding of the output characteristics while low temperature measurements gave precious information on the remaining defects in the TFETs, as well as on which process steps to improve in the future.

Keywords :
subthreshold slope, tunneling, transistor, characterization, TFET, FDSOI..