Simulation and Characterization of P-MOSFET on SOI with and without Extended Drain

Abstract :
The aim of this seminar is to present thesis work focused on, on one hand, understanding the behavior of SOI P-type MOSFETs used for an imager application in the 3DSL technology platform [1]. These transistors are affected by a parasitic edge contribution due to the active isolation performed by mesa. On the other hand, it demonstrates the first integration of a MOS transistor with an extended drain (EDMOS) on an SOI with a moderately thin film (23nm). The film thickness allows performance modulation with back-gate biasing, as well as the presence of floating body effects. The interest in P-EDMOS lies in its ability to support high drain voltages, and its electrical characterization has shown that it is well-positioned relative to the state of the art. Simulation and characterization work have enabled us to understand certain aspects related to transistor operation, the effect of doping on its performance, leakage mechanisms, and optimization pathways as well.